New innovation by NUS researchers enhances information storage in electronics

A team of researchers from the Department of Electrical & Computer Engineering at the National University of Singapore Faculty of Engineering has developed a new Magnetoresistive Random Access Memory technology that will boost information storage in electronic systems. The innovative technology will drastically increase storage space and enhance memory which will ensure that fresh data stays intact, even in the case of a power failure. The team has already filed a US provisional patent for their…

Fuente : http://www.eurekalert.org/pub_releases/2013-12/nuo…



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